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NTE3083 Optoisolator NPN Darlington Transistor Output
Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo- darlington in a 6-Lead DIP type package. Features: D High Sensitivity: 1mA on the Input will Sink a TTL gate D High Isolation: 3550VDC, 1012, 0.5pF Absolute Maximum Ratings: Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +100C Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Linearly to 100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/C Input to Output Isolation Voltage (1sec), VISOL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3550VDC Input Diode Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Peak Forward Current (1s pulse, 300pps), IFpeak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Output Darlington Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125mA Electro-Optical Characteristics: (TA = +25C unless otherwise specified)
Parameter Capacitance Resistance Voltage Breakdown Symbol Ciso Riso Viso Test Conditions f = 1MHz V = 500VDC t = 1sec Min - 3550 Typ 0.5 - Max - - - Unit pF VDC Isolation Between Emitter and Detector 1011 1012
Electro-Optical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter Emitter (GaAs LED) Forward Voltage Reverse Voltage Junction Capacitance Collector Breakdown Voltage Base Breakdown Voltage Emitter Breakdown Voltage Collector Leakage Current Saturation Voltage VF VR CJ IF = 20mA IR = 10A VR = 0V - 3.0 - 30 30 6 - - - - - - - - - - 200 1.15 25.0 50 60 60 8 1 0.8 0.8 0.9 2 50k 6 80 200 400 400 1.50 - - - - - 100 1.0 1.0 1.2 - - - - - - - pF s s s % V V pF V V V nA V V V A Symbol Test Conditions Min Typ Max Unit
Detector (Silicon Photo-Darlington) V(BR)CEO IC = 1mA V(BR)CBO IC = 10A V(BR)EBO IE = 10A ICEO VCE(sat) VCE = 10V IC = 2mA, IF = 1mA IC = 10mA, IF = 5mA IC = 50mA, IF = 10mA Base Photo-Current Darlington Gain Collector-Emitter Capacitance Switching Times, Coupled Rise Time, Fall Time TTL Gate Turn-On Time TTL Gate Turn-Off Time DC Collector Current Transfer Ratio tr, tf tON tOFF CTR VCC = 10V, IC = 10mA, RL = 100 IF = 1mA IF = 1mA IF = 10mA, VCE = 5V IB hFE CCE VCB = 5V, IF = 10mA IB = 1A, VCE = 1V VCE = 10V
6
5
4
1 Anode Cathode N.C. 1 2 3 6 Base 5 Collector 4 Emitter
2
3
.260 (6.6) Max
.070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .350 (8.89) Max .300 (7.62)
.085 (2.16) Max
.100 (2.54)

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